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PD -93906A
AUTOMOTIVE MOSFET
Typical Applications
q q
IRFP2907
HEXFET(R) Power MOSFET
D
Integrated Starter Alternator 42 Volts Automotive Electrical Systems Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
G
VDSS = 75V RDS(on) = 4.5m
S
Benefits
q q q q q q
ID = 209A
Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET(R) Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw
Max.
209 148 840 470 3.1 20 1970 See Fig.12a, 12b, 15, 16 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.24 ---
Max.
0.32 --- 40
Units
C/W
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1
9/7/00
IRFP2907
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff.
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. 75 --- --- 2.0 130 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 4.5 m VGS = 10V, ID = 125A 4.0 V VDS = 10V, ID = 250A --- S VDS = 25V, ID = 125A 20 VDS = 75V, VGS = 0V A 250 VDS = 60V, VGS = 0V, TJ = 150C 200 VGS = 20V nA -200 VGS = -20V 620 ID = 125A 140 nC VDS = 60V 210 VGS = 10V --- VDD = 38V --- ID = 125A ns --- RG = 1.2 --- VGS = 10V D Between lead, 5.0 --- 6mm (0.25in.) nH G from package 13 --- and center of die contact S 13000 --- VGS = 0V 2100 --- pF VDS = 25V 500 --- = 1.0MHz, See Fig. 5 9780 --- VGS = 0V, VDS = 1.0V, = 1.0MHz 1360 --- VGS = 0V, VDS = 60V, = 1.0MHz 2320 --- VGS = 0V, VDS = 0V to 60V
Typ. --- 0.085 3.6 --- --- --- --- --- --- 410 92 140 23 190 130 130
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol --- --- 209 showing the A G integral reverse --- --- 840 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 125A, VGS = 0V --- 140 210 ns TJ = 25C, IF = 125A --- 880 1320 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11). Starting TJ = 25C, L = 0.25mH RG = 25, IAS = 125A. (See Figure 12). ISD 125A, di/dt 260A/s, VDD V(BR)DSS, TJ 175C Pulse width 400s; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS . Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 90A. Limited by T Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
2
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IRFP2907
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
4.5V
10
4.5V
1 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
10 0.1
20s PULSE WIDTH TJ = 175 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
ID = 209A
RDS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
TJ = 175 C
2.5
100
2.0
TJ = 25 C
1.5
10
1.0
0.5
1 4.0
V DS = 25V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRFP2907
20000 20 VGS = 0V, f = 1 MHZ Ciss = C + C , C gs gd ds SHORTED Crss = C gd Coss = C + C ds gd
ID = 125A VDS = 60V VDS = 37V
VGS , Gate-to-Source Voltage (V)
16000
16
C, Capacitance(pF)
Ciss
12000
12
8000
8
4000
Coss Crss
1 10 100
4
0
0 0 100 200 300
FOR TEST CIRCUIT SEE FIGURE 13
400 500 600 700
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
10000
OPERATION IN THIS AREA LIMITED BY RDS(on)
ISD , Reverse Drain Current (A)
I D , Drain Current (A)
100
TJ = 175 C
1000 10us
10
100us
TJ = 25 C
1
100 1ms
0.1 0.0
V GS = 0 V
0.5 1.0 1.5 2.0 2.5 3.0
10 1
TC = 25 C TJ = 175 C Single Pulse
10
10ms 100 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFP2907
240
LIMITED BY PACKAGE
200
VDS VGS RG
RD
D.U.T.
+
I D , Drain Current (A)
160
-VDD
10V
Pulse Width 1 s Duty Factor 0.1 %
120
80
Fig 10a. Switching Time Test Circuit
VDS 90%
40
0 25 50 75 100 125 150 175
TC , Case Temperature
( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.01
0.001 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFP2907
1 5V
5000
EAS , Single Pulse Avalanche Energy (mJ)
TOP BOTTOM
VDS
L
D R IV E R
4000
ID 51A 88A 125A
RG
20V tp
D .U .T
IA S
+ - VD D
3000
A
0 .0 1
2000
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS tp
1000
0 25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( C)
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
10 V
QGS VG
VGS(th) , Variace ( V )
QGD
4.0
3.5
3.0
Charge
ID = 250A
2.5
Fig 13a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
2.0
50K 12V .2F .3F
1.5
D.U.T. + V - DS
1.0 -75 -50 -25 0 25 50 75 100 125 150 175
VGS
3mA
T J , Temperature ( C )
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 14. Threshold Voltage Vs. Temperature
6
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IRFP2907
1000
Duty Cycle = Single Pulse
Avalanche Current (A)
100
0.01
Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses
0.05 0.10
10
1 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
2000
EAR , Avalanche Energy (mJ)
1600
TOP Single Pulse BOTTOM 10% Duty Cycle ID = 125A
1200
800
400
0 25 50 75 100 125 150
Starting T J , Junction Temperature (C)
Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = T/ ZthJC Iav = 2T/ [1.3*BV*Zth] EAS (AR) = PD (ave)*t av
Fig 16. Maximum Avalanche Energy Vs. Temperature
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IRFP2907
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG VGS * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test
+ VDD
*
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive P.W. Period D=
P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 17. For N-channel HEXFET(R) power MOSFETs
8
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IRFP2907
TO - 247 Package Outline
Dimensions are shown in millimeters (inches)
-DDBM 5.3 0 (.20 9) 4.7 0 (.18 5) 2 .50 (.089) 1 .50 (.059) 4
15.90 (.6 26) 15.30 (.6 02) -B-
3.65 (.143 ) 3.55 (.140 ) 0.25 (.01 0) M -A5.50 (.21 7)
2 0.30 (.80 0) 1 9.70 (.77 5) 1 2 3
2X
5.50 (.2 17) 4.50 (.1 77)
NOTES: 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O J E D E C O U T L IN E T O -2 4 7 -A C .
-C1 4.80 (.583 ) 1 4.20 (.559 ) 4 .30 (.170 ) 3 .70 (.145 )
2 .40 (.094) 2 .00 (.079) 2X 5.45 (.21 5) 2X
1 .40 (.056 ) 3X 1 .00 (.039 ) 0 .25 (.010 ) M 3.4 0 (.1 33) 3.0 0 (.1 18) C AS
0 .80 (.031) 3X 0 .40 (.016) 2.60 (.10 2) 2.20 (.08 7)
L E A D A S S IG N M E N T S 1 2 3 4 GATE D R A IN SOURCE D R A IN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice9/00
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